PARA LIGHT(光鼎電子)

Insulated Gate Bipolar Transistors (IGBTs) play a crucial role in power electronics applications, including servo motor control, renewable energy, uninterruptible power supplies (UPS), photovoltaic (PV) inverters, frequency converters, electric vehicles, industrial automation, and consumer electronics. Para Light Electronics Ltd., Co. (Para Light) addresses this challenge by offering its 7th-Gen discrete IGBT solutions, which leverage advanced Micro-Pattern Trench (MPT) design and manufacturing technology. These IGBTs have now reached mass production maturity, with a stable chip yield rate of up to 98%, combining high performance, superior efficiency, and cost advantages to provide the most competitive solution for power electronics applications. Para Light’s 7th-Gen IGBT discrete solutions offer a 20% efficiency improvement compared to 6th-Gen IGBT solutions of the same voltage and current ratings. Moreover, benchmarking test data show that these solutions excel in key performance parameters, including collector-emitter voltage (VCE), rated current (Ic), saturation voltage (VCE-sat), gate threshold voltage (VGE(th)), and switching energy losses (Ets). By integrating these high-efficiency IGBTs, businesses can significantly enhance system performance, reduce energy costs, and increase profitability.